论文标题
强烈无序锑膜中电荷传输中的记忆效应
Memory effect in the charge transport in strongly disordered antimony films
论文作者
论文摘要
我们研究在高偏置电压下强烈无序的无定形锑膜的电导率。我们观察到非线性电流 - 电压特性，其中零偏置的电导率值是两个不同的值之一，取决于先前施加的电压的迹象。松弛曲线表明这些电导率值在较大的时间尺度上的稳定性很高。对锑膜结构的研究允许确定在强无序膜中电子传输的渗滤特征。由于某些膜区域在高偏置电压下，我们将电导率的记忆效应与渗透模式的修改联系起来。
We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages.
