学术文献库

The effective mass approximation (EMA) could be an efficient method for the computational study of semiconductor nanostructures with sizes too large to be handled by first-principles calculations, but the scheme to accurately and reliably introduce EMA parameters for given nanostructures remains to be devised. Herein, we report on an EMA approach based on first-principles-derived data, which enables accurate predictions of the optoelectronic properties of quantum nanostructures. For the CdS/ZnS core/shell quantum rods, for which we recently reported its experimental synthesis, we first carry out density functional theory (DFT) calculations for an infinite nanowire to obtain the nanoscopic dielectric constant, effective mass, and Kohn-Sham potential. The DFT-derived data are then transferred to the finite nanorod cases to set up the EMA equations, from which we estimate the photoluminescence (PL) characteristics. Compared with the corresponding method based on bulk EMA parameters and abrupt potential, we confirm that our EMA approach more accurately describes the PL properties of nanorods. We find that, in agreement with the experimentally observed trends, the optical gap of nanorods is roughly determined by the nanorod diameter and the PL intensity is reduced with increasing the nanorod length. The developed methodology is additionally applied to CdSe nanoplatelets, where reliable experimental data became recently available. Here, we again obtain excellent agreements between calculated and measured optical gap values, confirming the generality of our approach. It is finally shown that the abrupt confinement potential approximation most adversely affects the accuracy of EMA simulations.