论文标题
通过散射在极化杂质上的散射，电子传输的精确解在半导体中
Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities
论文作者
论文摘要
电子在具有内部自由度的杂质上的散射必定会产生散射器自身动力学的特征，并在非平凡的电子传输特性中产生。先前对低维结构中的极化杂质（如分子连接和一维纳米线模型）的研究表明，扰动处理无法解释此类系统中散射横截面的复杂能量依赖性。在这里，我们得出了层状杂质的精确溶液，该杂质塑造了散装系统中电子传输的溶液。在具有短量电子相互作用的模型中，我们在所有弹性和非弹性部分横截面上求解并汇总，并具有谐振特征。电荷迁移率的温度依赖性显示了幂律依赖性，$μ（t）\ propto t^{ - ν} $，$ν$对杂质参数高度敏感。后者可以解释非近亲幂律指数在实验中观察到的，例如在高质量的有机分子半导体中。
The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic impurities in low-dimensional structures, like molecular junctions and one-dimensional nanowire models, have shown that perturbative treatments cannot account for a complex energy dependence of the scattering cross section in such systems. Here we derive the exact solution of polaronic impurities shaping the electronic transport in bulk (3D) systems. In the model with a short-ranged electron-phonon interaction, we solve for and sum over all elastic and inelastic partial cross sections, abundant in resonant features. The temperature dependence of the charge mobility shows the power-law dependence, $μ(T)\propto T^{-ν}$, with $ν$ being highly sensitive to impurity parameters. The latter may explain nonuniversal power-law exponents observed experimentally, e.g. in high-quality organic molecular semiconductors.
