论文标题
栅极定义的，单层和双层WSE $ _2 $中的累积模式量子点
Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe$_2$
论文作者
论文摘要
我们报告了单层和双层WSE $ _2 $中门定义的孔量子点的制造和表征。设备在WSE $ _2 $层上方和下方的门上操作，以积聚孔气，然后将其选择性地耗尽以定义点。库仑封锁状态中电导的温度依赖性与通过单个级别的传输一致，并且在高达10 k的温度下观察到通过点的激发状态运输。对于邻近的双层电荷$ _2 $ dot的充电状态，使用激发态能量的磁场依赖于0.8和2.4之间的0.8和2.4之间的磁场依赖性。这些设备提供了一个平台，用于评估单层中的山谷旋转状态和用于应用程序的BiLayer WSE $ _2 $。
We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single level, and excited state transport through the dots was observed at temperatures up to 10 K. For adjacent charge states of a bilayer WSe$_2$ dot, magnetic field dependence of excited state energies was used to estimate $g$-factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe$_2$ for application as qubits.
