论文标题
c $ _ {17} $ ge germagraphene的有趣热和光学特性的电子结构批判
Electronic structural critique of interesting thermal and optical properties of C$_{17}$Ge germagraphene
论文作者
论文摘要
在这种交流中，我们报告了一种理论尝试，以了解电子结构在确定C $ _ {17} $ ge germeragraphene的光学和热性能中的参与，这是一种弯曲的二维材料。发现该结构是具有低载体有效质量的直接带隙半导体。我们的研究表明，自旋轨道耦合对材料中的旋转霍尔电流的影响。有选择的高蓝色至紫外线吸收和可与火石玻璃相当的折射率打开了该材料对光电设备的适用性。从电子结构的角度来看，我们研究了其中等较高的Seebeck系数和功率因数与传统热电材料相当的原因。除了其狭窄的频带g，c $ _ {17} $ ge（$ 4.361〜EV $）的工作功能比石墨烯（$ 4.390〜EV $）和germanene（$ 4.682〜EV $）可确保更容易从表面上清除电子。事实证明，该材料是从光学到热装置制度的未来派半导体应用的绝佳替代方法。
In this communication, we report a theoretical attempt to understand the involvement of electronic structure in determination of optical and thermal properties of C$_{17}$Ge germagraphene, a buckled two dimensional material. The structure is found to be a direct bandgap semiconductor with low carrier effective mass. Our study has revealed that the effect of spin-orbit coupling on the band structure and in appearance of spin Hall current in the material. A selectively high blue to ultraviolet light absorption and a refractive index comparable to flint glass open up the possible applicability of this material for optoelectronic devices. From electronic structural point of view, we investigate the reason behind its moderately high Seebeck coefficient and power factor comparable to traditional thermoelectric materials. Besides its narrow bandgap, relatively smaller work function of C$_{17}$Ge ($4.361 ~eV$) than graphene ($4.390 ~eV$) and germanene ($4.682 ~eV$) assures more easily removal of electron from the surface. This material is turned out to be an excellent alternative for futuristic semiconductor application from optical to thermal device regime.
