论文标题
紧凑型线性对撞机的硅顶点和跟踪探测器
Silicon Vertex & Tracking Detectors for the Compact Linear Collider
论文作者
论文摘要
CLIC是建议的线性$ E^+E^ - $ collider，质量中心能量最多为3 tev。它的主要目标是精确的顶级夸克，希格斯玻色子和超越标准模型物理。除了几微米的空间分辨率和非常低的材料预算外，顶点和跟踪探测器还需要定时功能，精度为几纳秒，以允许抑制光束诱导的背景颗粒。使用混合硅探测器的不同技术进行了顶点探测器的探索，例如专用的65 nm读数ASIC，天线传感器以及使用各向异性导电膜进行键合。整体传感器是当前的跟踪检测器选择，并且已经设计和生产了使用180 nm高抗性CMOS工艺的原型，目前正在评估中。使用硅在绝缘子过程中的不同设计正在为顶点和跟踪检测器进行研究。所有原型均在实验室和梁测试中进行了测试，并且新开发的模拟工具结合了Geant4和TCAD来评估和优化其性能。此贡献概述了CLIC顶点和跟踪探测器的研发计划，并强调了原型的新结果。
CLIC is a proposed linear $e^+e^-$ collider with center-of-mass energies of up to 3 TeV. Its main objectives are precise top quark, Higgs boson and Beyond Standard Model physics. In addition to spatial resolutions of a few micrometers and a very low material budget, the vertex and tracking detectors also require timing capabilities with a precision of a few nanoseconds to allow suppression of beam-induced background particles. Different technologies using hybrid silicon detectors are explored for the vertex detectors, such as dedicated 65 nm readout ASICs, small-pitch sensors as well as bonding using anisotropic conductive films. Monolithic sensors are the current choice for the tracking detector, and a prototype using a 180 nm high-resistivity CMOS process has been designed and produced, and is currently under evaluation. Different designs using a silicon-on-insulator process are under investigation for both vertex and tracking detector. All prototypes are tested in laboratory and beam tests, and newly developed simulation tools combining Geant4 and TCAD are used to assess and optimize their performance. This contribution gives an overview of the R&D program for the CLIC vertex and tracking detectors, highlighting new results from the prototypes.
