论文标题
用STM和NC-AFM成像的氢终止硅的原子缺陷（100）-2x1表面
Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
论文作者
论文摘要
氢终止的硅（100）-2x1表面（H-SI（100）-2x1）为开发原子尺度设备提供了有前途的平台，最近的工作表明了它们通过精确解吸表面氢原子的创造。尽管使用原位方法通常会形成氢终止2x1表面的相对较大面积的样品，但不可避免地会形成表面缺陷，并减少可用于图案的区域。在这里，我们提出了H-SI（100）-2x1表面的几个常见缺陷的目录。通过结合扫描隧道显微镜（STM）和非接触式原子力显微镜（NC-AFM）的组合，我们能够提取有关这些缺陷的原子和电子结构的有用信息。这允许确认几种常见缺陷的文献分配，以及先前未报告和未分配的缺陷的拟议分类。通过更好地理解这些缺陷的结构和起源，我们迈出了使创建优越表面的第一步，最终导致了原子量表设备的更加一致和可靠的制造。
The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption of surface hydrogen atoms. While samples with relatively large areas of the hydrogen terminated 2x1 surface are routinely created using an in-situ methodology, surface defects are inevitably formed as well reducing the area available for patterning. Here, we present a catalog of several commonly found defects of the H-Si(100)-2x1 surface. By using a combination of scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM), we are able to extract useful information regarding the atomic and electronic structure of these defects. This allowed for the confirmation of literature assignments of several commonly found defects, as well as proposed classification of previously unreported and unassigned defects. By better understanding the structure and origin of these defects, we make the first steps toward enabling the creation of superior surfaces ultimately leading to more consistent and reliable fabrication of atom scale devices.
