论文标题

熵控制的GE在Miscut Si(001)表面上的完全可逆的纳米结构形成

Entropy controlled fully reversible nanostructure formation of Ge on miscut vicinal Si (001) surfaces

论文作者

Grossauer, Christian, Holy, Vaclv, Springholz, Gunther

论文摘要

熵效应实质上改变了自组装纳米结构在囊泡Si(001)表面上的生长。如变化的温度扫描隧道显微镜所示,这导致了新型的一维纳米结构的新型,这些纳米结构不仅可以调整大小和形状,而且可以完全可逆地擦除和改革而没有最终尺寸和形状的变化。这种独特的行为是由综合表面的大步骤熵引起的自由表面能量重新归一化引起的。在热力学平衡中,这有利于在较高温度下平面2D表面的形成,而纳米结构的表面是首选的低温构型。考虑到步骤熵,通过自由能计算得出临界相变温度,并显示出与GE覆盖范围几乎线性的缩放,并且与实验非常吻合。由于自我限制,纳米线的大小仅由GE覆盖范围和阴性角度控制,完全独立于生长或一季条件。因此,获得具有可调几何形状的高度可重现的纳米结构。这为可控的纳米结构形成开辟了新的途径,用于实践延期应用。

Entropy effects substantially modify the growth of self-assembled Ge nanostructures on vicinal Si (001) surfaces. As shown by variable temperature scanning tunneling microscopy, this leads to new types of one dimensional nanostructures that are not only tunable in size and shape but can be fully reversible erased and reformed without changes in final sizes and shapes. This unique behavior is caused by the free surface energy renormalization caused by the large step entropy of vicinal surfaces. In thermodynamic equilibrium, this favors the formation of a planar 2D surface at higher temperatures, where-as the nanostructured surface is the preferred low-temperature configuration. Taking the step entropy into account, the critical phase transition temperature is derived by free energy calculations and is shown to scale nearly linearly with the Ge coverage, in excellent agreement with the experiments. Due to self-limitation, the nanowire size is solely controlled by the Ge coverage and vicinal angle, completely independent of the growth or an-nealing conditions. Thus, highly reproducible nanostructures with tunable geometries are obtained. This opens new avenues for controlled nanostructure formation for practical de-vice applications.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源