论文标题
半准SIP2中的线性和二次磁化
Linear and quadratic magnetoresistance in the semimetal SiP2
论文作者
论文摘要
从理论上提出了许多在许多拓扑非平地/琐事半学上发现的极大磁化（XMR）的多种机制，但是在实验上，在特定样品中哪些机制尚不清楚哪种机制是负责的。在本文中，通过频带结构计算的结合，磁磁性的数值模拟（MR），Hall电阻率和De Haas-Van Alphen（DHVA）振荡测量，我们研究了SIP $ _ {2} $的MR各向异性，这是一种验证是一种拓扑中的拓扑替代，不可复害的补偿。已经发现，随着磁场（$ h $）的使用，沿$ a $ axis应用，MR展示了不饱和的几乎线性$ h $依赖性，这是由于不完整的载体补偿而引起的。 For the $H$ $\parallel$ [101] orientation, an unsaturated nearly quadratic $H$ dependence of MR up to 5.88 $\times$ 10$^{4}$$\%$ (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the $k_{x}$ direction.实验结果与基于计算的费米表面（FS）的模拟的良好一致性表明，FS的拓扑在其MR中起重要作用。
Multiple mechanisms for extremely large magnetoresistance (XMR) found in many topologically nontrivial/trivial semimetals have been theoretically proposed, but experimentally it is unclear which mechanism is responsible in a particular sample. In this article, by the combination of band structure calculations, numerical simulations of magnetoresistance (MR), Hall resistivity and de Haas-van Alphen (dHvA) oscillation measurements, we studied the MR anisotropy of SiP$_{2}$ which is verified to be a topologically trivial, incomplete compensation semimetal. It was found that as magnetic field, $H$, is applied along the $a$ axis, the MR exhibits an unsaturated nearly linear $H$ dependence, which was argued to arise from incomplete carriers compensation. For the $H$ $\parallel$ [101] orientation, an unsaturated nearly quadratic $H$ dependence of MR up to 5.88 $\times$ 10$^{4}$$\%$ (at 1.8 K, 31.2 T) and field-induced up-turn behavior in resistivity were observed, which was suggested due to the existence of hole open orbits extending along the $k_{x}$ direction. Good agreement of the experimental results with the simulations based on the calculated Fermi surface (FS) indicates that the topology of FS plays an important role in its MR.
