论文标题
(111)$ SRRUO_ {3} $薄膜$ - $的电子带结构
Electronic band structure of (111) $SrRuO_{3}$ thin film$-$an angle-resolved photoemission spectroscopy study
论文作者
论文摘要
我们研究了使用\ textit {intu}角度分辨的光发射光谱(ARPES)技术研究了脉冲激光沉积(PLD)的电子带结构(PLD)(111)的srruo $ _3 $(SRO)薄膜。我们观察到先前未报告的,具有重新归一化的准粒子有效质量约为0.8 $ m_ {e} $的光带。该质量重新归一化的基础电子耦合产生了频带分散体中的特征“扭结”。使用爱因斯坦模型的自能量分析表明,涵盖44至90 MEV能量范围的五种光学声子模式有助于耦合。此外,我们表明,在费米水平上的准粒子光谱强度得到了极大的抑制,并且在结合能量分别为0.8 eV和1.4 eV的配价带光谱中出现了两个突出的峰。我们讨论了这些观察结果的可能含义。总体而言,我们的工作表明,具有大型自旋轨道耦合的氧化物的高质量薄膜可以通过PLD技术沿极(111)方向生长,从而使\ textit {intu {intu}电子带结构研究。这可以表征(111)异质结构$ - $ $ $的先决条件,用于探索双层限制中可能的拓扑量子状态的先决条件。
We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a characteristic "kink" in the band dispersion. The self-energy analysis using the Einstein model suggests five optical phonon modes covering an energy range 44 to 90 meV contribute to the coupling. Besides, we show that the quasiparticle spectral intensity at the Fermi level is considerably suppressed, and two prominent peaks appear in the valance band spectrum at binding energies of 0.8 eV and 1.4 eV, respectively. We discuss the possible implications of these observations. Overall, our work demonstrates that high-quality thin films of oxides with large spin-orbit coupling can be grown along the polar (111) orientation by the PLD technique, enabling \textit{in situ} electronic band structure study. This could allow for characterizing the thickness-dependent evolution of band structure of (111) heterostructures$-$a prerequisite for exploring possible topological quantum states in the bilayer limit.