论文标题
在Algan/GAN金属绝缘子半导体高电子迁移式晶体管中，外在相关捕获效应的脱钩
Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
论文作者
论文摘要
研究了影响对α/GAN金属绝不能超过半导体高电子迁移式晶体管动态不稳定性的外延因素的脱钩。通过在阈值电压中的动态不稳定性（V $ _ {\ Mathrm {th}} $ shift）中分析了三组样本。次级离子质谱，稳态光致发光（PL）测量已与电特性一起进行。发现设备动态性能显着取决于靠近通道的C浓度以及通道和较高掺杂的C区域之间的距离。此外，我们注意到，研究捕获的实验应避免纸载体密度的巨大变化（n $ _ {\ mathrm {s}} $）。 n $ _ {\ mathrm {s}} $本身的这种变化对V $ _ {\ Mathrm {th}} $ shift具有重大影响。基本模型和设备模拟也支持了这种实验趋势。最后，研究了黄色发光（YL）与频段边缘（BE）比率与V $ _ {\ Mathrm {th}} $ Shift之间的关系。只要不更改基本层结构，就证明从稳态PL获得的YL/BE比是预测GAN通道层中陷阱浓度的有效方法。
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage (V$_{\mathrm{th}}$ shift). Secondary ion mass spectroscopy, steady-state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration close to the channel as well as on the distance between the channel and the higher doped C region. Additionally, we note that experiments studying trapping should avoid large variations in the sheet carrier density (N$_{\mathrm{s}}$). This change in the N$_{\mathrm{s}}$ itself has a significant impact on the V$_{\mathrm{th}}$ shift. This experimental trends are also supported by a basic model and device simulation. Finally, the relationship between the yellow luminescence (YL) and the band edge (BE) ratio and the V$_{\mathrm{th}}$ shift is investigated. As long as the basic layer structure is not changed, the YL/BE ratio obtained from steady-state PL is demonstrated to be a valid method in predicting trap concentrations in the GaN channel layer.
