论文标题
少数单层Yttria掺杂的氧化锆膜：隔离和相位稳定
Few-monolayer yttria-doped zirconia films: Segregation and phase stabilization
论文作者
论文摘要
对于大多数应用，氧化锆（ZRO2）用Yttria掺杂。掺杂导致四方或立方相的稳定，并增加氧离子电导率。但是，大多数对Yttria掺杂氧化锆的表面研究都受到杂质的困扰。我们研究了X射线光电光谱（XPS），扫描隧道显微镜（STM）和低能电子衍射（LEED），研究了RH（111）上的纯5-onolayer Zro2膜的掺杂（111）。 STM和LEED表明，即使膜基本上完全氧化了（如XPS核心水平移位，也证明了薄膜，即使膜被完全完全氧化，四方相也通过出乎意料的低掺杂浓度（0.5 mol％Y2O3）稳定。 XPS还显示了Y隔离到表面上的分离，估计的隔离焓为$ -23 \ pm 4 $ \，kj/mol。
For most applications, zirconia (ZrO2) is doped with yttria. Doping leads to the stabilization of the tetragonal or cubic phase, and increased oxygen ion conductivity. Most previous surface studies of yttria-doped zirconia were plagued by impurities, however. We have studied doping of pure, 5-monolayer ZrO2 films on Rh(111) by x-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), and low-energy electron diffraction (LEED). STM and LEED show that the tetragonal phase is stabilized by unexpectedly low dopant concentrations, 0.5 mol% Y2O3, even when the films are essentially fully oxidized (as evidenced by XPS core level shifts). XPS also shows Y segregation to the surface with an estimated segregation enthalpy of $-23 \pm 4$\,kJ/mol.
